High-Resolution Photosensitive Material for RDL Redistribution Layers
N-PSPI Photosensitive Dielectric Material is a high-performance photosensitive dielectric material specifically developed for RDL（Redistribution Layer）processes. It features excellent imaging resolution, low curing temperature, high taper-angle via profiles, and outstanding dielectric properties.
N-PSPI enables direct photolithographic patterning of fine structures and is widely applied in WLP, PLP, and other advanced packaging architectures.
With its high resolution and low CTE characteristics, N-PSPI provides an optimal dielectric solution for high-speed, high-frequency, and high-reliability semiconductor packaging.
Common Challenges and Limitations
Modern advanced packaging technologies – such as 2.5D / 3D IC, AI/HBM, and PLP packaging – place increasingly stringent requirements on RDL dielectric materials:
- Fine line widths and via dimensions
- Lower dielectric loss
- Higher taper angles for reliable metal filling
- Lower CTE and improved material stability
Microcosm N-PSPI Photosensitive Dielectric Material is specifically engineered to address the challenges of advanced packaging.
Product Advantages
| Feature | Description | Product Values |
|---|---|---|
| High Resolution | 5/10、10/10 μm | Improves precision of fine RDL routing; supports high-density packaging and high-speed chip designs |
| Low-Temperature Curing | 200°C | Compatible with PLP packaging and temperature-sensitive substrates; increases process flexibility |
| High Taper Angle | 86.1°～86.9° | Enables smoother metal via filling, reduces via failure, and improves overall yield |
| Low CTE | 17 ppm/°C、37 ppm/°C | Reduces thermal stress, effectively minimizing package warpage and interconnect fatigue |
| Excellent Thermal Stability | Td5% = 332°C | Withstands high temperatures in downstream plating, reflow, and packaging processes |
| Superior dielectric properties | Dk = 3.3 | Ensures more stable high-frequency, high-speed signal transmission with lower signal loss |
| Outstanding mechanical properties | Tensile strength 110 MPa、elongation 31% | Enhances structural stability of the package and improves long-term reliability |
Why Choose Us?
See the Product Comparison
| Performance Metric | Microcosm N-PSPI | General PI | General Photosensitive Materials |
|---|---|---|---|
| Curing Temperature | 200°C（Low-Temp.） | 350°C↑ | 230–260°C |
| Resolution | 5/10 μm | 10/20 μm | 7/15 μm |
| Taper Angle | > 86° | 70–75° | 78–82° |
| CTE | 17 / 37 ppm/°C（Low） | 40–60 ppm | 50 ppm↑ |
| Decomposition Temp. | 332°C | 300°C | 310°C |
| Dk | 3.3（Excellent） | 3.5–3.8 | ≥ 3.7 |
The Optimal Solution
N-PSPI Photosensitive Dielectric Material significantly outperforms conventional materials in resolution, sharp taper angle, and low CTE, making it the ideal dielectric layer for high-density, high-reliability RDL applications.
Product Application Structure
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RDL Redistribution Layer Application Structure Diagram
